Semiconductors Research

Current Projects

Application of few-body techniques to 2D semiconductor materials: This collaborative project involves researchers from Central State University and Brazilian collaborators from Aeronautics Institute of Technology, as well as the Federal University of Ceará. It aims to develop a comprehensive theoretical framework and computational tools to study trions in semiconductor layered materials. The approach employs the Faddeev equations in momentum space, addressing the bound state of three distinct particles interacting with three different pair interactions in two dimensions. We have utilized two different screening schemes for the repulsive electron-electron or hole-hole potential to solve the three coupled Faddeev integral equations for the Rytova-Keldysh interaction. One of these schemes screens the interaction in the infrared region, while the other screens it in the ultraviolet region. Our results demonstrate that both methods provide consistent outcomes for the MoS2 layer, extrapolating the trion energy to the situation without screening. Specifically, we have found a trion binding energy of approximately -50 meV for an exciton energy of approximately −753 meV. This work provides a foundation for future research in this field, with implications for advancing our understanding of the fundamental physics behind semiconductor layered materials and their properties.